microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2003 rev. 1.0a www. microsemi . com MXP7001 10 gbps gaas pin photo diode p roduction d ata s heet integrated products description microsemi?s gaas pin photo diode chips are ideal for high bandwidth 850nm optical networking applications. the device family offers superior noise performance and sensitivity in single die. the MXP7001 is currently offered in die form allowing manufacturers the versatility of custom assembly using either bond wire or flip chip configurations. this device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination of pin photo diode and trans-impedance amplifier. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? 75m aperture ? semi-insulating substrate ? high responsivity ? low dark current ? high bandwidth ? anode/cathode on illuminated side ? 100m pad size ? die good for bond wire or flip chip applications applications ? short reach optical networks ? 10gigabit ethernet, fibre channel ? vcsel array receiver benefits ? large wirebond contact pads ? low contact resistance product highlight ? large 100m x 100m pad size for ease of packaging ? wire bond or flip chip capability package order info die dimension, m pad dimension, m part number active area, k, m y x j l pad pitch, p, m die thickness, m MXP7001 75 304.8 508 100 100 218.35 100 m m x x p p 7 7 0 0 0 0 1 1
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2003 rev. 1.0a www. microsemi . com MXP7001 10 gbps gaas pin photo diode p roduction d ata s heet integrated products electrical characteristics test conditions (unle ss otherwise noted): t a = 25c, v r = 5 volts MXP7001 parameter symbol test conditions min typ max units ` maximum ratings operating junction temperature range t j -20 +100 c storage temperature range t stg -55 +125 c maximum soldering temperature 10 seconds maximum at temperature +260 c ` electrical characteristics active area diameter 75 m responsivity r v r = 5v, = 850nm 0.55 0.6 a/w dark current i d v r = 5v 0.01 0.5 na breakdown voltage bv r i r = 2a 30 60 volts capacitance c v r = 5v 0.22 0.25 pf bandwidth (1) bw v r = 5v, = 850nm @ -3db 8.0 10.0 ghz note: 1. bandwidth is measured at ?3db electrical power (phot ocurrent drops to 71% of dc value) into a 50 ohm load e e l l e e c c t t r r i i c c a a l l s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2003 rev. 1.0a www. microsemi . com MXP7001 10 gbps gaas pin photo diode p roduction d ata s heet integrated products characteristic curves dark current vs voltage over temperature 0.001 0.010 0.100 1.000 10.000 100.000 0.0 v 2.0 v 4.0 v 6.0 v 8.0 v 10.0 v 12.0 v 14.0 v 16.0 v bias voltage (v) id (na) -10 deg c 25 deg c 50 deg c 85 deg c 110 deg c dark current vs temp 0.001 0.010 0.100 1.000 10.000 -40 -20 0 20 40 60 80 100 120 temp (oc) id (na) bvr @ ir=2ua 20.000 40.000 60.000 80.000 100.000 -40 -20 0 20 40 60 80 100 120 temp (oc) bvr (v) u limit max avg min l limit MXP7001- cv 0.210 0.215 0.220 0.225 0.230 0246810 reverse voltage(v) c (pf) MXP7001 bandwidth -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 0.e+00 5.e+09 1.e+10 2.e+10 frequency (hz) relative s21(db) vr=-5v, bw=12.6ghz vr=-4v,bw =12.5 ghz vr=-3v, bw=12.8ghz vr=-2v,bw=12.9 ghz vr=-1v, bw=13.0ghz c c h h a a r r t t s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2003 rev. 1.0a www. microsemi . com MXP7001 10 gbps gaas pin photo diode p roduction d ata s heet integrated products circuit model r diode c diode c shunt r ser l ser rser ( ? ) lser (nh) cshunt (ff) cdiode (ff) rdiode(m ? ) MXP7001 10.6 0.05 41 170 100 die geometry dim m a 50 b 95.7 c 108.3 d 110 e 94 f 50 g 50 h 204.8 i 50 j 100 k 75 l 100 precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling gaas pin photo diode. m m e e c c h h a a n n i i c c a a l l s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2003 rev. 1.0a www. microsemi . com MXP7001 10 gbps gaas pin photo diode p roduction d ata s heet integrated products notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
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